Infineon introduces 1200 V Silicon Carbide MOSFET technology Updated On Thu, May 5th, 2016 by Saurenergy Infineon Technologies has introduced a 1200 V silicon carbide (SiC) MOSFET technology for exceptional efficiency and performance in power conversion. The company in a statement said its CoolSiC MOSFETs offer a new degree of flexibility for increasing efficiency and frequency and help developers of power conversion schemes to save space and weight, reduce cooling requirements, […] Read more
