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Infineon introduces 1200 V Silicon Carbide MOSFET technology

Infineon Technologies has introduced a 1200 V silicon carbide (SiC) MOSFET technology for exceptional efficiency and performance in power conversion. The company in a statement said its CoolSiC MOSFETs offer a new degree of flexibility for increasing efficiency and frequency and help developers of power conversion schemes to save space and weight, reduce cooling requirements, […]

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