Toshiba Electronic Devices & Storage Corporation 2nd Gen 650V SiC Schottky Barrier Diodes Updated On Tue, Nov 21st, 2017 by Saurenergy Product Brief: Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Product Feature: The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure […] Read more
