Toshiba Electronic Devices & Storage Corporation Introduces Second-Generation 650V SiC Schottky Barrier Diodes Updated On Tue, Oct 17th, 2017 by Saurenergy The new SiC SBDs incorporate Toshiba’s latest second-generation chip, and it delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1). Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. […] Read more
