Toshiba Electronic Devices & Storage Corporation 2nd Gen 650V SiC Schottky Barrier Diodes Updated On Tue, Nov 21st, 2017 by Saurenergy Product Brief: Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Product Feature: The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure […] Read more
Wolfspeed Achieves All-SiC 1.2kV power Module Reliability Benchmark for Harsh Environment Operation Updated On Tue, May 16th, 2017 by Saurenergy Wolfspeed’s new SiC power module enables highest reliability SiC devices for outdoor systems in renewable energy and transportation Wolfspeed, a Cree Company has announced that its power module has passed the harsh environment qualification test. Wolfspeed achieved SiC 1.2kV power module reliability benchmark for simultaneous high-humidity, high-temperature and high-voltage conditions. This reliability benchmark enables system […] Read more
