Toshiba Electronic Devices & Storage Corporation 2nd Gen 650V SiC Schottky Barrier Diodes

Product Brief: Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages.

Product Feature: The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

Application: Wide range of commercial and industrial applications in solar microinverters/ micro inverter circuits.

Benefits: The addition of TDSC’s fi rst SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness. It is known to have high surge peak forward current: Approx. 7 to 9.5 times the current rating, IF (DC), low figure of merit (VF•Qc): About 1/3 lower than first generation products, indicating high efficiency and Surface-mount package: Enables auto mounters and helps to reduce system size and thickness.

Availability: Volume shipments of diodes has begun.