Vishay Intertechnology introduces new 650 V EF Series devices

Vishay Intertechnology has expanded its portfolio of fast body diode n-channel power MOSFETs with the launch of new 650 V EF Series devices. The 650 V EF Series devices include the Vishay Siliconix SiHx21N65EF, SiHx28N65EF and SiHG33N65EF which according to the company will provide additional voltage headroom for industrial, telecom and renewable energy applications when needed.

The 650 V fast body diode MOSFETs built on E Series superjunction technology feature a 10x lower reverse recovery charge (Q_rr) than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters, and 3-level inverters.

The 21 A SiHx21N65EF comes in five packages, while the 28 A SiHx28N65EF and 33 A SiHG33N65EF are available in two. The devices feature low on-resistance down to 157 mΩ, 102 mΩ, and 95 mΩ, respectively, and ultra-low gate charge.These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external electric vehicle (EV) charging stations, and LED, high-intensity discharge (HID), and fluorescent ballast lighting.

The company in a statement said that the devices are designed to withstand high energy pulses in the avalanche and commutation mode.

Key specifications of 650 V EF Series devices