Toshiba Electronic Devices & Storage Corporation Introduces Second-Generation 650V SiC Schottky Barrier Diodes

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, and it delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1).

Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments of diodes has begun.

Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF•Qc*1). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.

Features

• High surge peak forward current: Approx. 7 to 9.5 times the current rating, IF(DC).
• Low figure of merit (VF•Qc): About 1/3 lower than first generation products, indicating high efficiency.
• Surface-mount package: Enables auto mounters and helps to reduce system size and thickness.

The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.

• Industrial equipment: power supply for telecommunication base stations, PC servers, solar microinverters, etc.
• For circuits: power factor correction (PFC) circuits; micro inverter circuits; chopper circuits (various power supplies of hundreds of watts or more).
• Free-wheel diode for switching device.

Source: BusinessWire